2N5657G
2N5657G
Part Number 2N5657G
Description TRANS NPN 350V 0.5A TO225AA
Package / Case TO-225AA, TO-126-3
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Detailed Description Bipolar (BJT) Transistor NPN 350V 500mA 10MHz 20W Through Hole TO-225AA
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2N5657G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N5655, 5657
Standard Package 500
Manufacturer ON Semiconductor
Series -
Packaging Bulk
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 350V
Vce Saturation (Max) @ Ib, Ic 10V @ 100mA, 500mA
Current - Collector Cutoff (Max) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 100mA, 10V
Power - Max 20W
Frequency - Transition 10MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-225AA
Base Part Number 2N5657
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