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2N5657G

2N5657G

Part Number2N5657G

ManufacturerON Semiconductor

DescriptionTRANS NPN 350V 0.5A TO225AA

Datasheet2N5655, 5657

Package / CaseTO-225AA, TO-126-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 350V 500mA 10MHz 20W Through Hole TO-225AA

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2N5657G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	2N5655, 5657
Standard Package	500
Manufacturer	ON Semiconductor
Series	-
Packaging	Bulk
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	350V
Vce Saturation (Max) @ Ib, Ic	10V @ 100mA, 500mA
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 100mA, 10V
Power - Max	20W
Frequency - Transition	10MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Supplier Device Package	TO-225AA
Base Part Number	2N5657

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2N5657G - Tags

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