2N5657G
2N5657G
Part Number 2N5657G Description TRANS NPN 350V 0.5A TO225AA Package / Case TO-225AA, TO-126-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 350V 500mA 10MHz 20W Through Hole TO-225AA
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2N5657G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N5655, 5657 Standard Package 500 Manufacturer ON Semiconductor Series - Packaging Bulk Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 350V Vce Saturation (Max) @ Ib, Ic 10V @ 100mA, 500mA Current - Collector Cutoff (Max) 100µA DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 100mA, 10V Power - Max 20W Frequency - Transition 10MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-225AA Base Part Number 2N5657
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