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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2N7002BK Datasheet
Standard Package 10000
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
FET Feature -
Power Dissipation (Max) 370mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
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SIR122DP-T1-RE3
Vishay Siliconix, N-Channel 80V 16.7A (Ta), 59.6A (Tc) 5.2W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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SI7172ADP-T1-RE3
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STW26NM50
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DMN26D0UT-7
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SI8806DB-T2-E1
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CSD17308Q3T
Texas Instruments, N-Channel 30V 14A (Ta), 44A (Tc) 2.7W (Ta), 28W (Tc) Surface Mount 8-VSON-CLIP (3.3x3.3), NexFET™
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SUD40N08-16-E3
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BUK9M43-100EX
Nexperia USA Inc., N-Channel 100V 25A (Tc) 80W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™
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IRFBG20PBF
Vishay Siliconix, N-Channel 1000V 1.4A (Tc) 54W (Tc) Through Hole TO-220AB,
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TK13A60D(STA4,Q,M)
Toshiba Semiconductor and Storage, N-Channel 600V 13A (Ta) 50W (Tc) Through Hole TO-220SIS, π-MOSVII
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BSS670S2LH6327XTSA1
Infineon Technologies, N-Channel 55V 540mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, OptiMOS™
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