Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJQ466E-T1_GE3

SQJQ466E-T1_GE3

SQJQ466E-T1_GE3

Part NumberSQJQ466E-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 200A POWERPAK8

DatasheetSQJQ466E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SQJQ466E-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJQ466E-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJQ466E-T1_GE3.
We are offering SQJQ466E-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJQ466E-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJQ466E
Standard Package	2000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10210pF @ 25V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN

SQJQ466E-T1_GE3 - Related Products

	CDM3-800 TR13	Central Semiconductor Corp, N-Channel 800V 3A (Tc) 80W (Tc) Surface Mount DPAK,	View
	IRFS4310ZTRLPBF	Infineon Technologies, N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount D2PAK, HEXFET®	View
	SISA24DN-T1-GE3	Vishay Siliconix, N-Channel 25V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen IV	View
	IPP086N10N3GXKSA1	Infineon Technologies, N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	STL15N65M5	STMicroelectronics, N-Channel 650V 10A (Tc) 52W (Tc) Surface Mount PowerFlat™ (5x6), MDmesh™ V	View
	2N7000	ON Semiconductor, N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3,	View
	TPH2R306NH,L1Q	Toshiba Semiconductor and Storage, N-Channel 60V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	CSD18533Q5A	Texas Instruments, N-Channel 60V 17A (Ta), 100A (Tc) 3.2W (Ta), 116W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	PSMN2R0-30YLE,115	Nexperia USA Inc., N-Channel 30V 100A (Tc) 272W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	PMZ290UNEYL	Nexperia USA Inc., N-Channel 20V 1A (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006-3,	View
	IPD30N03S4L09ATMA1	Infineon Technologies, N-Channel 30V 30A (Tc) 42W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	TSM1N80CW RPG	Taiwan Semiconductor Corporation, N-Channel 800V 300mA (Ta) 2.1W (Tc) Surface Mount SOT-223,	View

SQJQ466E-T1_GE3 - Tags

SQJQ466E-T1_GE3 SQJQ466E-T1_GE3 PDF SQJQ466E-T1_GE3 datasheet SQJQ466E-T1_GE3 specification SQJQ466E-T1_GE3 image SQJQ466E-T1_GE3 India Renesas Electronics India SQJQ466E-T1_GE3 buy SQJQ466E-T1_GE3 SQJQ466E-T1_GE3 price SQJQ466E-T1_GE3 distributor SQJQ466E-T1_GE3 supplier SQJQ466E-T1_GE3 wholesales