TPH2R306NH,L1Q
TPH2R306NH,L1Q
Part Number TPH2R306NH,L1Q Description MOSFET N CH 60V 60A SOP ADV Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5)
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TPH2R306NH,L1Q - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TPH2R306NH Standard Package 1 Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V Rds On (Max) @ Id, Vgs 2.3mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 30V FET Feature - Power Dissipation (Max) 1.6W (Ta), 78W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Advance (5x5) Package / Case 8-PowerVDFN
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