SQM200N04-1M1L_GE3
SQM200N04-1M1L_GE3
Part Number SQM200N04-1M1L_GE3 Description MOSFET N-CH 40V 200A TO-263 Package / Case TO-263-7, D²Pak (6 Leads + Tab)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 200A (Tc) 375W (Tc) Surface Mount TO-263-7
To learn about the specification of SQM200N04-1M1L_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQM200N04-1M1L_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQM200N04-1M1L_GE3.
We are offering SQM200N04-1M1L_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQM200N04-1M1L_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQM200N04-1M1L-GE3 Standard Package 800 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 413nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 20655pF @ 25V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab)
SQM200N04-1M1L_GE3 - Related ProductsMore >>
RQ3L050GNTB Rohm Semiconductor, N-Channel 60V 12A (Tc) 14.8W (Tc) Surface Mount 8-HSMT (3.2x3),
View
RD3T075CNTL1 Rohm Semiconductor, N-Channel 200V 7.5A (Tc) 52W (Tc) Surface Mount TO-252,
View
PSMN1R1-40BS,118 Nexperia USA Inc., N-Channel 40V 120A (Tc) 306W (Tc) Surface Mount D2PAK,
View
BSS123TA Diodes Incorporated, N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3,
View
NTD4809NT4G ON Semiconductor, N-Channel 30V 9.6A (Ta), 58A (Tc) 1.4W (Ta), 52W (Tc) Surface Mount DPAK,
View
IRFS31N20DTRLP Infineon Technologies, N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Surface Mount D2PAK, HEXFET®
View
PMZ200UNEYL Nexperia USA Inc., N-Channel 30V 1.4A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006-3,
View
2N7002PW,115 Nexperia USA Inc., N-Channel 60V 310mA (Ta) 260mW (Ta) Surface Mount SC-70,
View
IRF540NSTRLPBF Infineon Technologies, N-Channel 100V 33A (Tc) 130W (Tc) Surface Mount D2PAK, HEXFET®
View
IRF6614TRPBF Infineon Technologies, N-Channel 40V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST, HEXFET®
View
SIHJ10N60E-T1-GE3 Vishay Siliconix, N-Channel 600V 10A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8,
View
FQH8N100C ON Semiconductor, N-Channel 1000V 8A (Tc) 225W (Tc) Through Hole TO-247-3, QFET®
View
SQM200N04-1M1L_GE3 - Tags
English
