Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	2SA1162
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	PNP
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Power - Max	150mW
Frequency - Transition	80MHz
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini
Base Part Number	2SA1162

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ZXTP25100CZTA	Diodes Incorporated, Bipolar (BJT) Transistor PNP 100V 1A 180MHz 2.4W Surface Mount SOT-89-3,	View
FZT755TA	Diodes Incorporated, Bipolar (BJT) Transistor PNP 150V 1A 30MHz 2W Surface Mount SOT-223,	View

2SA1162-GR,LF

Part Number2SA1162-GR,LF