Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC2714
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	550MHz
Noise Figure (dB Typ @ f)	2.5dB @ 100MHz
Gain	23dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 1mA, 6V
Current - Collector (Ic) (Max)	20mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

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2SC5065-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount USM,	View
2SC5646A-TL-H	ON Semiconductor, RF Transistor NPN 4V 30mA 10GHz ~ 12.5GHz 100mW Surface Mount 3-SSFP,	View
NSVMMBTH10LT1G	ON Semiconductor, RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23,	View
2SC4915-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount SSM,	View
MMBTH10-4LT1G	ON Semiconductor, RF Transistor NPN 25V 800MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
NSVF6003SB6T1G	ON Semiconductor, RF Transistor NPN 12V 150mA 7GHz 800mW Surface Mount 6-CPH, Automotive, AEC-Q101	View
2SC5245A-4-TL-E	ON Semiconductor, RF Transistor NPN 10V 30mA 8GHz 150mW Surface Mount 3-MCP,	View
KST10MTF	ON Semiconductor, RF Transistor NPN 25V 650MHz 350mW Surface Mount SOT-23-3,	View
MCH4014-TL-H	ON Semiconductor, RF Transistor NPN 12V 30mA 10GHz 350mW Surface Mount 4-MCPH,	View
BFR740L3RHE6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount PG-TSLP-3,	View
HFA3134IHZ96	Renesas Electronics America Inc., RF Transistor 2 NPN (Dual) 9V 26mA 8.5GHz Surface Mount SOT-23-6,	View

2SC2714-O(TE85L,F)

Part Number2SC2714-O(TE85L,F)