Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113P
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	7.7GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	10.5dB
Power - Max	1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	PW-MINI

55GN01CA-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 4.5GHz 200mW Surface Mount 3-CP,	View
2SC5066-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount SSM,	View
2SC5227A-4-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP,	View
BFP460H6327XTSA1	Infineon Technologies, RF Transistor NPN 5.8V 70mA 22GHz 230mW Surface Mount PG-SOT343-4,	View
KST10MTF	ON Semiconductor, RF Transistor NPN 25V 650MHz 350mW Surface Mount SOT-23-3,	View
MRF428	M/A-Com Technology Solutions, RF Transistor NPN 55V 20A 150W Chassis Mount 211-11, Style 2,	View
2N5109	Central Semiconductor Corp, RF Transistor NPN 20V 400mA 1.2GHz 1W Through Hole TO-39,	View
BFU768F,115	NXP USA Inc., RF Transistor NPN 2.8V 70mA 220mW Surface Mount 4-DFP,	View
2N918	Central Semiconductor Corp, RF Transistor NPN 15V 50mA 600MHz 200mW Through Hole TO-72,	View
PBR941,215	NXP USA Inc., RF Transistor NPN 10V 50mA 8GHz 360mW Surface Mount TO-236AB (SOT23),	View
SS9018GBU	ON Semiconductor, RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3,	View
BFP840ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 35mA 80GHz 75mW Surface Mount SOT-343,	View

MT3S113P(TE12L,F)

Part NumberMT3S113P(TE12L,F)