Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC4215
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	550MHz
Noise Figure (dB Typ @ f)	2dB ~ 5dB @ 100MHz
Gain	17dB ~ 23dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 6V
Current - Collector (Ic) (Max)	20mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

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BFU768F,115	NXP USA Inc., RF Transistor NPN 2.8V 70mA 220mW Surface Mount 4-DFP,	View
MMBT918LT1G	ON Semiconductor, RF Transistor NPN 15V 50mA 600MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFP640FH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount 4-TSFP,	View
BFU690F,115	NXP USA Inc., RF Transistor NPN 5.5V 100mA 18GHz 230mW Surface Mount 4-DFP,	View
BFP843FH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 55mA 125mW Surface Mount TSFP-4-1,	View
BFR92PE6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 45mA 5GHz 280mW Surface Mount SOT-23-3,	View
BFP196E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 150mA 7.5GHz 700mW Surface Mount PG-SOT143-4,	View
BFU730LXZ	NXP USA Inc., RF Transistor NPN 3V 30mA 53GHz 160mW Surface Mount 3-DFN1006 (1.0x0.6),	View
BFQ790H6327XTSA1	Infineon Technologies, RF Transistor NPN 6.1V 300mA 1.85GHz 1.5W Surface Mount SOT-89,	View
2SC2714-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount S-Mini,	View

2SC4215-Y(TE85L,F)

Part Number2SC4215-Y(TE85L,F)