Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	RF Discretes Selection Guide
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.5V
Frequency - Transition	40GHz
Noise Figure (dB Typ @ f)	0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain	23dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 30mA, 3V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD, Flat Leads
Supplier Device Package	4-TSFP
Base Part Number	BFP640

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BFU550WX	NXP USA Inc., RF Transistor NPN 12V 50mA 11GHz 450mW Surface Mount SOT-323-3, Automotive, AEC-Q101	View
BFR360L3E6765XTMA1	Infineon Technologies, RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSLP-3-1,	View
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2SC5226A-5-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP,	View

BFP640FH6327XTSA1

Part NumberBFP640FH6327XTSA1