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MMBTH10M3T5G


MMBTH10M3T5G

Part NumberMMBTH10M3T5G

Manufacturer

Description

Datasheet

Package / CaseSOT-723

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MMBTH10M3T5G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25V
Frequency - Transition650MHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max265mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA, 10V
Current - Collector (Ic) (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageSOT-723
Base Part NumberMMBTH10

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