Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2N5179
Standard Package	2000
Manufacturer	Central Semiconductor Corp
Series	-
Packaging	Bulk
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	2GHz
Noise Figure (dB Typ @ f)	4.5dB @ 200MHz
Gain	15dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 3mA, 1V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Supplier Device Package	TO-72

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2N4427	Central Semiconductor Corp, RF Transistor NPN 20V 400mA 500MHz 1W Through Hole TO-39,	View
BFP196WNH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 150mA 7.5GHz 700mW Surface Mount PG-SOT343-4,	View
MAX2602ESA+	Maxim Integrated, RF Transistor NPN 15V 1.2A 1GHz 6.4W Surface Mount 8-SOIC-EP,	View
2SC4618TLP	Rohm Semiconductor, RF Transistor NPN 25V 50mA 300MHz 150mW Surface Mount EMT3,	View
BFR193FH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSFP-3,	View

2N5179

Part Number2N5179