Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFR106
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	5GHz
Noise Figure (dB Typ @ f)	1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Gain	8.5dB ~ 13dB
Power - Max	700mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 70mA, 8V
Current - Collector (Ic) (Max)	210mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3
Base Part Number	BFR106

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BFU690F,115	NXP USA Inc., RF Transistor NPN 5.5V 100mA 18GHz 230mW Surface Mount 4-DFP,	View
2SC5085-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View
BFP740FESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 45mA 47GHz 160mW Surface Mount 4-TSFP,	View
PBR941,215	NXP USA Inc., RF Transistor NPN 10V 50mA 8GHz 360mW Surface Mount TO-236AB (SOT23),	View
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MRF428	M/A-Com Technology Solutions, RF Transistor NPN 55V 20A 150W Chassis Mount 211-11, Style 2,	View

BFR106E6327HTSA1

Part NumberBFR106E6327HTSA1