Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	RF Discretes Selection Guide
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	3.5V
Frequency - Transition	45GHz
Noise Figure (dB Typ @ f)	0.95dB @ 1.8GHz
Gain	22.5dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 20mA, 2V
Current - Collector (Ic) (Max)	40mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD, Flat Leads
Supplier Device Package	4-TSFP
Base Part Number	BFP520

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BFU730LXZ	NXP USA Inc., RF Transistor NPN 3V 30mA 53GHz 160mW Surface Mount 3-DFN1006 (1.0x0.6),	View
BFP620FH7764XTSA1	Infineon Technologies, RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount 4-TSFP,	View
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BFP520FH6327XTSA1

Part NumberBFP520FH6327XTSA1