Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	55GN01CA
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	4.5GHz
Noise Figure (dB Typ @ f)	1.9dB @ 1GHz
Gain	9.5dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Current - Collector (Ic) (Max)	70mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	3-CP

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2SC5085-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View
BFR193E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount SOT-23-3,	View
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55GN01CA-TB-E

Part Number55GN01CA-TB-E