Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFR182
Standard Package	3000
Manufacturer	Infineon Technologies
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain	12dB ~ 18dB
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 8V
Current - Collector (Ic) (Max)	35mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3
Base Part Number	BFR182

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BFT25,215	NXP USA Inc., RF Transistor NPN 5V 6.5mA 2.3GHz 30mW Surface Mount TO-236AB (SOT23),	View
BF776H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount PG-SOT343-4,	View
BFG35,115	NXP USA Inc., RF Transistor NPN 18V 150mA 4GHz 1W Surface Mount SOT-223,	View
2SC5536A-TL-H	ON Semiconductor, RF Transistor NPN 12V 50mA 1.7GHz 100mW Surface Mount 3-SSFP,	View
BFP540H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount PG-SOT343-4,	View
2N5109	Central Semiconductor Corp, RF Transistor NPN 20V 400mA 1.2GHz 1W Through Hole TO-39,	View
BFP740FH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount 4-TSFP,	View
BFP520FH6327XTSA1	Infineon Technologies, RF Transistor NPN 3.5V 40mA 45GHz 100mW Surface Mount 4-TSFP,	View
BFP193E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT143-4,	View
2SC5095-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70,	View

BFR182E6327HTSA1

Part NumberBFR182E6327HTSA1