Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC2714
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	550MHz
Noise Figure (dB Typ @ f)	2.5dB @ 100MHz
Gain	23dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 6V
Current - Collector (Ic) (Max)	20mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

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ZUMTS17NTA	Diodes Incorporated, RF Transistor NPN 11V 50mA 3.2GHz 330mW Surface Mount SOT-323,	View
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HFA3046BZ	Renesas Electronics America Inc., RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 14-SOIC,	View
MMBTH10RG	ON Semiconductor, RF Transistor NPN 40V 50mA 450MHz 225mW Surface Mount SOT-23-3,	View
2SC5226A-5-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP,	View
2SC5065-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount USM,	View
BFP540FESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount 4-TSFP,	View
BFP405H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 25mA 25GHz 75mW Surface Mount SOT-343,	View
MMBTH10-4LT1G	ON Semiconductor, RF Transistor NPN 25V 800MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFP720H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 25mA 45GHz 100mW Surface Mount SOT-343,	View
BLT81,115	NXP USA Inc., RF Transistor NPN 9.5V 500mA 900MHz 2W Surface Mount SOT-223,	View

2SC2714-Y(TE85L,F)

Part Number2SC2714-Y(TE85L,F)