Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC2714
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	550MHz
Noise Figure (dB Typ @ f)	2.5dB @ 100MHz
Gain	23dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 6V
Current - Collector (Ic) (Max)	20mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

BFT25A,215	NXP USA Inc., RF Transistor NPN 5V 6.5mA 5GHz 32mW Surface Mount TO-236AB (SOT23),	View
BFU580QX	NXP USA Inc., RF Transistor NPN 12V 60mA 10.5GHz 1W Surface Mount SOT-89-3,	View
BFS17WH6327XTSA1	Infineon Technologies, RF Transistor NPN 15V 25mA 1.4GHz 280mW Surface Mount PG-SOT323-3,	View
BFU790F,115	NXP USA Inc., RF Transistor NPN 2.8V 100mA 25GHz 234mW Surface Mount 4-DFP,	View
BFP620FH7764XTSA1	Infineon Technologies, RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount 4-TSFP,	View
BFP196WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 150mA 7.5GHz 700mW Surface Mount PG-SOT343-4,	View
BFR193E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount SOT-23-3,	View
BFU590GX	NXP USA Inc., RF Transistor NPN 12V 200mA 8.5GHz 2W Surface Mount SOT-223,	View
MMBTH10-7-F	Diodes Incorporated, RF Transistor NPN 25V 50mA 650MHz 300mW Surface Mount SOT-23-3,	View
BFP181E7764HTSA1	Infineon Technologies, RF Transistor NPN 12V 20mA 8GHz 175mW Surface Mount PG-SOT143-4,	View
BFP450H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 100mA 24GHz 450mW Surface Mount PG-SOT343-4,	View
2SC5085-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View

2SC2714-Y(TE85L,F)

Part Number2SC2714-Y(TE85L,F)