Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC4215
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	550MHz
Noise Figure (dB Typ @ f)	2dB ~ 5dB @ 100MHz
Gain	17dB ~ 23dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 6V
Current - Collector (Ic) (Max)	20mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

2SC5226A-5-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP,	View
2SC4915-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount SSM,	View
MCH4015-TL-H	ON Semiconductor, RF Transistor NPN 12V 100mA 10GHz 450mW Surface Mount 4-MCPH,	View
BFQ790H6327XTSA1	Infineon Technologies, RF Transistor NPN 6.1V 300mA 1.85GHz 1.5W Surface Mount SOT-89,	View
2SC5227A-4-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP,	View
BFP842ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 3.7V 40mA 60GHz 120mW Surface Mount SOT-343,	View
BFP840ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 35mA 80GHz 75mW Surface Mount SOT-343,	View
BFU630F,115	NXP USA Inc., RF Transistor NPN 5.5V 30mA 21GHz 200mW Surface Mount 4-DFP,	View
BFP843FH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 55mA 125mW Surface Mount TSFP-4-1,	View
2SC2714-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount S-Mini,	View
BF776H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount PG-SOT343-4,	View
2SC5488A-TL-H	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 100mW Surface Mount 3-SSFP,	View

2SC4215-Y(TE85L,F)

Part Number2SC4215-Y(TE85L,F)