Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5065
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1dB @ 500MHz
Gain	-
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

BFR840L3RHESDE6327XTSA1	Infineon Technologies, RF Transistor NPN 2.6V 35mA 75GHz 75mW Surface Mount PG-TSLP-3,	View
MMBTH10-4LT1G	ON Semiconductor, RF Transistor NPN 25V 800MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFU520XRR	NXP USA Inc., RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface Mount SOT-143R, Automotive, AEC-Q101	View
BFP640H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount PG-SOT343-4,	View
BFP740FH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount 4-TSFP,	View
2SC5536A-TL-H	ON Semiconductor, RF Transistor NPN 12V 50mA 1.7GHz 100mW Surface Mount 3-SSFP,	View
BFP450H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 100mA 24GHz 450mW Surface Mount PG-SOT343-4,	View
KSP10TA	ON Semiconductor, RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92-3,	View
BFR182E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount SOT-23-3,	View
BFR106E6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 210mA 5GHz 700mW Surface Mount SOT-23-3,	View
2SC4215-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount USM,	View
2SC5095-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70,	View

2SC5065-O(TE85L,F)

Part Number2SC5065-O(TE85L,F)