Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5065
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	12dB ~ 17dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 10mA, 5V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

MT3S113P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 7.7GHz 1.6W Surface Mount PW-MINI,	View
CPH6003A-TL-E	ON Semiconductor, RF Transistor NPN 12V 150mA 7GHz 800mW Surface Mount 6-CPH,	View
BFP740ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 45mA 45GHz 160mW Surface Mount SOT-343,	View
MMBTH10M3T5G	ON Semiconductor, RF Transistor NPN 25V 650MHz 265mW Surface Mount SOT-723,	View
55GN01MA-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 4.5GHz ~ 5.5GHz 400mW Surface Mount 3-MCP,	View
BFR106E6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 210mA 5GHz 700mW Surface Mount SOT-23-3,	View
BFS483H6327XTSA1	Infineon Technologies, RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6,	View
MT3S113(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 12.5GHz 800mW Surface Mount S-Mini,	View
BFS481H6327XTSA1	Infineon Technologies, RF Transistor 2 NPN (Dual) 12V 20mA 8GHz 175mW Surface Mount P-SOT363-6,	View
2SC5226A-5-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP,	View
BFP740FESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 45mA 47GHz 160mW Surface Mount 4-TSFP,	View
BFP196WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 150mA 7.5GHz 700mW Surface Mount PG-SOT343-4,	View

2SC5065-Y(TE85L,F)

Part Number2SC5065-Y(TE85L,F)