Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFU630F
Standard Package	3000
Manufacturer	NXP USA Inc.
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.5V
Frequency - Transition	21GHz
Noise Figure (dB Typ @ f)	0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
Gain	13dB ~ 22.5dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 5mA, 2V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-343F
Supplier Device Package	4-DFP
Base Part Number	BFU630

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2SC4215-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount USM,	View
MMBTH10-TP	Micro Commercial Co, RF Transistor NPN 25V 50mA 650MHz 225mW Surface Mount SOT-23,	View
BFP193WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT343-4,	View
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BFU630F,115

Part NumberBFU630F,115