Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFU730LX
Standard Package	1
Manufacturer	NXP USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	3V
Frequency - Transition	53GHz
Noise Figure (dB Typ @ f)	0.75dB @ 6GHz
Gain	15.8dB
Power - Max	160mW
DC Current Gain (hFE) (Min) @ Ic, Vce	205 @ 2mA, 3V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Supplier Device Package	3-DFN1006 (1.0x0.6)

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BFR740L3RHE6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount PG-TSLP-3,	View
BFR93AWH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 90mA 6GHz 300mW Surface Mount PG-SOT323-3,	View
BFR460L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 5.8V 50mA 22GHz 200mW Surface Mount PG-TSLP-3-1,	View

BFU730LXZ

Part NumberBFU730LXZ