Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5095
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	10GHz
Noise Figure (dB Typ @ f)	1.8dB @ 2GHz
Gain	13dB ~ 7.5dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 7mA, 6V
Current - Collector (Ic) (Max)	15mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SC-70

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2SC5536A-TL-H	ON Semiconductor, RF Transistor NPN 12V 50mA 1.7GHz 100mW Surface Mount 3-SSFP,	View
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BFR460L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 5.8V 50mA 22GHz 200mW Surface Mount PG-TSLP-3-1,	View
MMBTH10M3T5G	ON Semiconductor, RF Transistor NPN 25V 650MHz 265mW Surface Mount SOT-723,	View
BFP450H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 100mA 24GHz 450mW Surface Mount PG-SOT343-4,	View
MAX2602ESA+	Maxim Integrated, RF Transistor NPN 15V 1.2A 1GHz 6.4W Surface Mount 8-SOIC-EP,	View
BFP650H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 150mA 37GHz 500mW Surface Mount PG-SOT343-4,	View
HFA3127BZ	Renesas Electronics America Inc., RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 16-SOIC,	View

2SC5095-R(TE85L,F)

Part Number2SC5095-R(TE85L,F)