Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5095
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	10GHz
Noise Figure (dB Typ @ f)	1.8dB @ 2GHz
Gain	13dB ~ 7.5dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 7mA, 6V
Current - Collector (Ic) (Max)	15mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SC-70

MT3S111(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini,	View
2SC5085-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View
BF776H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount PG-SOT343-4,	View
BFS17PE6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 25mA 1.4GHz 280mW Surface Mount SOT-23-3,	View
BFU730LXZ	NXP USA Inc., RF Transistor NPN 3V 30mA 53GHz 160mW Surface Mount 3-DFN1006 (1.0x0.6),	View
NSVF6003SB6T1G	ON Semiconductor, RF Transistor NPN 12V 150mA 7GHz 800mW Surface Mount 6-CPH, Automotive, AEC-Q101	View
BFP840ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 35mA 80GHz 75mW Surface Mount SOT-343,	View
KSP10TA	ON Semiconductor, RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92-3,	View
MT3S111P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI,	View
2SC5065-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount USM,	View
2SC5095-R(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mount SC-70,	View
BFR193L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSLP-3-1,	View

2SC5095-R(TE85L,F)

Part Number2SC5095-R(TE85L,F)