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2SD1060S-1E


2SD1060S-1E

Part Number2SD1060S-1E

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2SD1060S-1E - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package50
ManufacturerON Semiconductor
Series-
PackagingTube
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)5A
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 300mA, 3A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 1A, 2V
Power - Max1.75W
Frequency - Transition30MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

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2SD1060S-1E - Tags

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