2SK2009TE85LF
2SK2009TE85LF
Part Number 2SK2009TE85LF Description MOSFET N-CH 30V 0.2A SMINI Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59-3
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2SK2009TE85LF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2SK2009 Standard Package 1 Manufacturer Toshiba Semiconductor and Storage Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V Rds On (Max) @ Id, Vgs 2Ohm @ 50MA, 2.5V Vgs(th) (Max) @ Id 1.5V @ 100µA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 70pF @ 3V FET Feature - Power Dissipation (Max) 200mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-59-3 Package / Case TO-236-3, SC-59, SOT-23-3
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