2SK3566(STA4,Q,M)

Part Number2SK3566(STA4,Q,M)

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	2SK3566
Standard Package	50
Manufacturer	Toshiba Semiconductor and Storage
Series	π-MOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	6.4Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	470pF @ 25V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack

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TSM1NB60CH C5G	Taiwan Semiconductor Corporation, N-Channel 600V 1A (Tc) 39W (Tc) Through Hole TO-251 (IPAK),	View
PSMN2R8-40PS,127	Nexperia USA Inc., N-Channel 40V 100A (Tc) 211W (Tc) Through Hole TO-220AB,	View