Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Datasheet	3SK292
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	N-Channel Dual Gate
Frequency	500MHz
Gain	26dB
Voltage - Test	6V
Current Rating (Amps)	30mA
Noise Figure	1.4dB
Current - Test	10mA
Power - Output	-
Voltage - Rated	12.5V
Package / Case	SC-61AA
Supplier Device Package	SMQ

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CE3521M4	CEL, RF Mosfet pHEMT FET 2V 10mA 20GHz 11.9dB 125mW 4-Super Mini Mold,	View
BF998E6327HTSA1	Infineon Technologies, RF Mosfet N-Channel 8V 10mA 45MHz 28dB PG-SOT143-4,	View
IXZR16N60	IXYS-RF, RF Mosfet N-Channel 100V 65MHz 23dB 350W PLUS247™-3, Z-MOS™	View
475-102N21A-00	IXYS-RF, RF Mosfet N-Channel 1800W DE475, DE	View
STAC2933	STMicroelectronics, RF Mosfet N-Channel 50V 250mA 30MHz 23.5dB 400W STAC177B,	View
CE3512K2	CEL, RF Mosfet pHEMT FET 2V 10mA 12GHz 13.7dB 125mW 4-Micro-X,	View
SD2943W	STMicroelectronics, RF Mosfet N-Channel 50V 250mA 30MHz 25dB 350W M177,	View
STAC3933	STMicroelectronics, RF Mosfet N-Channel 100V 250mA 30MHz 29dB 350W STAC177B,	View
MRF174	M/A-Com Technology Solutions, RF Mosfet N-Channel 28V 2A 150MHz 11.8dB 125W 211-11, Style 2,	View
BF998E6327HTSA1	Infineon Technologies, RF Mosfet N-Channel 8V 10mA 45MHz 28dB PG-SOT143-4,	View

3SK292(TE85R,F)

Part Number3SK292(TE85R,F)