Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Datasheet	3SK291
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	N-Channel Dual Gate
Frequency	800MHz
Gain	22.5dB
Voltage - Test	6V
Current Rating (Amps)	30mA
Noise Figure	2.5dB
Current - Test	10mA
Power - Output	-
Voltage - Rated	12.5V
Package / Case	SC-61AA
Supplier Device Package	SMQ

VRF2944	Microsemi Corporation, RF Mosfet N-Channel 50V 250mA 30MHz 22dB 400W M177,	View
BF992,215	NXP USA Inc., RF Mosfet N-Channel Dual Gate 10V 15mA 200MHz SOT-143B,	View
CE3512K2	CEL, RF Mosfet pHEMT FET 2V 10mA 12GHz 13.7dB 125mW 4-Micro-X,	View
VRF152	Microsemi Corporation, RF Mosfet N-Channel 50V 250mA 175MHz 14dB 150W M174,	View
SD2932W	STMicroelectronics, RF Mosfet N-Channel 50V 500mA 175MHz 16dB 300W M244,	View
BF998E6327HTSA1	Infineon Technologies, RF Mosfet N-Channel 8V 10mA 45MHz 28dB PG-SOT143-4,	View
STAC3933	STMicroelectronics, RF Mosfet N-Channel 100V 250mA 30MHz 29dB 350W STAC177B,	View
STAC2942FW	STMicroelectronics, RF Mosfet N-Channel 50V 250mA 175MHz 450W STAC244B,	View
3SK291(TE85L,F)	Toshiba Semiconductor and Storage, RF Mosfet N-Channel Dual Gate 6V 10mA 800MHz 22.5dB SMQ,	View
CE3520K3-C1	CEL, RF Mosfet pHEMT FET 2V 10mA 20GHz 13.8dB 125mW 4-Micro-X,	View
CE3512K2-C1	CEL, RF Mosfet pHEMT FET 2V 10mA 12GHz 13.7dB 125mW 4-Micro-X,	View
ARF1500	Microsemi Corporation, RF Mosfet N-Channel 125V 27.12MHz 19dB 750W T-1,	View

3SK291(TE85L,F)

Part Number3SK291(TE85L,F)