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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet AOT(F)12N65(L), AOB12N65(L)
Standard Package 1
Manufacturer Alpha & Omega Semiconductor Inc.
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 720mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 25V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IPB60R190C6ATMA1
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BSC020N03MSGATMA1
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Infineon Technologies, N-Channel 40V 100A (Tc) 150W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™
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STD6N80K5
STMicroelectronics, N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount DPAK, SuperMESH5™
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IXFP36N20X3
IXYS, N-Channel 200V 36A (Tc) 176W (Tc) Through Hole TO-220, HiPerFET™
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IPD30N03S4L09ATMA1
Infineon Technologies, N-Channel 30V 30A (Tc) 42W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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