SI2312-TP
SI2312-TP
Part Number SI2312-TP Description N-CHANNEL MOSFET, SOT-23 PACKAGE Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 5A (Ta) 350mW (Ta) Surface Mount SOT-23
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SI2312-TP - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2312 Standard Package 1 Manufacturer Micro Commercial Co Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 41mOhm @ 4.3A, 1.8V Vgs(th) (Max) @ Id 1V @ 250µA Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 865pF @ 10V FET Feature - Power Dissipation (Max) 350mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3
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