Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR882ADP-T1-GE3

SIR882ADP-T1-GE3

SIR882ADP-T1-GE3

Part NumberSIR882ADP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 60A PPAK SO-8

DatasheetSiR882ADP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR882ADP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR882ADP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR882ADP-T1-GE3.
We are offering SIR882ADP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR882ADP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiR882ADP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1975pF @ 50V
FET Feature	-
Power Dissipation (Max)	5.4W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR882ADP-T1-GE3 - Related Products

	IPN95R3K7P7ATMA1	Infineon Technologies, N-Channel 950V 2A (Tc) 6W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7	View
	SI8416DB-T2-E1	Vishay Siliconix, N-Channel 8V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1), TrenchFET®	View
	DMN3027LFG-7	Diodes Incorporated, N-Channel 30V 5.3A (Ta) 1W (Ta) Surface Mount PowerDI3333-8,	View
	HAT2266H-EL-E	Renesas Electronics America, N-Channel 60V 30A (Ta) 23W (Tc) Surface Mount LFPAK,	View
	BSC039N06NSATMA1	Infineon Technologies, N-Channel 60V 19A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	BUK9Y07-30B,115	Nexperia USA Inc., N-Channel 30V 75A (Tc) 105W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	DMN61D9U-7	Diodes Incorporated, N-Channel 60V 380mA (Ta) 370mW (Ta) Surface Mount SOT-23,	View
	IRF1310NPBF	Infineon Technologies, N-Channel 100V 42A (Tc) 160W (Tc) Through Hole TO-220AB, HEXFET®	View
	FDC5612	ON Semiconductor, N-Channel 60V 4.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	CSD17578Q3AT	Texas Instruments, N-Channel 30V 20A (Ta) 3.2W (Ta), 37W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™	View
	TSM80N950CP ROG	Taiwan Semiconductor Corporation, N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount TO-252, (D-Pak),	View
	VN10KN3-G-P002	Microchip Technology, N-Channel 60V 310mA (Tj) 1W (Tc) Through Hole TO-92-3,	View

SIR882ADP-T1-GE3 - Tags

SIR882ADP-T1-GE3 SIR882ADP-T1-GE3 PDF SIR882ADP-T1-GE3 datasheet SIR882ADP-T1-GE3 specification SIR882ADP-T1-GE3 image SIR882ADP-T1-GE3 India Renesas Electronics India SIR882ADP-T1-GE3 buy SIR882ADP-T1-GE3 SIR882ADP-T1-GE3 price SIR882ADP-T1-GE3 distributor SIR882ADP-T1-GE3 supplier SIR882ADP-T1-GE3 wholesales