Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR882ADP-T1-GE3

SIR882ADP-T1-GE3

SIR882ADP-T1-GE3

Part NumberSIR882ADP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 60A PPAK SO-8

DatasheetSiR882ADP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR882ADP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR882ADP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR882ADP-T1-GE3.
We are offering SIR882ADP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR882ADP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiR882ADP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1975pF @ 50V
FET Feature	-
Power Dissipation (Max)	5.4W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR882ADP-T1-GE3 - Related Products

	ZXMN3F30FHTA	Diodes Incorporated, N-Channel 30V 3.8A (Ta) 950mW (Ta) Surface Mount SOT-23-3,	View
	SIHD5N50D-E3	Vishay Siliconix, N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount D-PAK (TO-252AA),	View
	NX7002BKSX	Nexperia USA Inc., N-Channel 60V 270mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount 6-TSSOP,	View
	FDS8880	ON Semiconductor, N-Channel 30V 11.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	2N7000TA	ON Semiconductor, N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3,	View
	SPA08N80C3XKSA1	Infineon Technologies, N-Channel 800V 8A (Tc) 40W (Tc) Through Hole PG-TO220-FP, CoolMOS™	View
	IRFB52N15DPBF	Infineon Technologies, N-Channel 150V 51A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-220AB, HEXFET®	View
	IRFD210PBF	Vishay Siliconix, N-Channel 200V 600mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	DMTH10H010SPS-13	Diodes Incorporated, N-Channel 100V 11.8A (Ta), 123A (Tc) 1.5W (Ta) Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	STB80NF03L-04T4	STMicroelectronics, N-Channel 30V 80A (Tc) 300W (Tc) Surface Mount D2PAK, STripFET™ II	View
	STB160N75F3	STMicroelectronics, N-Channel 75V 120A (Tc) 330W (Tc) Surface Mount D2PAK, STripFET™	View
	IRF6674TRPBF	Infineon Technologies, N-Channel 60V 13.4A (Ta), 67A (Tc) 3.6W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ, HEXFET®	View

SIR882ADP-T1-GE3 - Tags

SIR882ADP-T1-GE3 SIR882ADP-T1-GE3 PDF SIR882ADP-T1-GE3 datasheet SIR882ADP-T1-GE3 specification SIR882ADP-T1-GE3 image SIR882ADP-T1-GE3 India Renesas Electronics India SIR882ADP-T1-GE3 buy SIR882ADP-T1-GE3 SIR882ADP-T1-GE3 price SIR882ADP-T1-GE3 distributor SIR882ADP-T1-GE3 supplier SIR882ADP-T1-GE3 wholesales