IXFN70N100X
IXFN70N100X
Part Number IXFN70N100X Manufacturer IXYS Description MOSFET 1KV 65A ULTRA JCT SOT227 Package / Case SOT-227-4, miniBLOCUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1000V 56A (Tc) 1200W (Tc) Chassis Mount SOT-227B
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IXFN70N100X - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXFN70N100X Datasheet Standard Package 30 Manufacturer IXYS Series HiPerFET™ Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 56A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 89mOhm @ 35A, 10V Vgs(th) (Max) @ Id 6V @ 8mA Gate Charge (Qg) (Max) @ Vgs 350nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 9150pF @ 25V FET Feature - Power Dissipation (Max) 1200W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
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