Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD80R360P7ATMA1

IPD80R360P7ATMA1

IPD80R360P7ATMA1

Part NumberIPD80R360P7ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 800V 13A TO252-3

DatasheetIPD80R360P7

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 13A (Tc) 84W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD80R360P7ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD80R360P7ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD80R360P7ATMA1.
We are offering IPD80R360P7ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD80R360P7ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD80R360P7
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	360mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id	3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	930pF @ 500V
FET Feature	-
Power Dissipation (Max)	84W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD80R360P7ATMA1 - Related Products

	IPP052NE7N3GXKSA1	Infineon Technologies, N-Channel 75V 80A (Tc) 150W (Tc) Through Hole PG-TO220-3-1, OptiMOS™	View
	STB6N80K5	STMicroelectronics, N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount D2PAK, SuperMESH5™	View
	SUM70040E-GE3	Vishay Siliconix, N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	FDS8842NZ	ON Semiconductor, N-Channel 40V 14.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	BSC118N10NSGATMA1	Infineon Technologies, N-Channel 100V 11A (Ta), 71A (Tc) 114W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	IPP051N15N5AKSA1	Infineon Technologies, N-Channel 150V 120A 500mW (Tc) Through Hole PG-TO220-3, OptiMOS™ 5	View
	STD95N4F3	STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount DPAK, STripFET™ III	View
	SIHP21N65EF-GE3	Vishay Siliconix, N-Channel 650V 21A (Tc) 208W (Tc) Through Hole TO-220AB,	View
	STW12N150K5	STMicroelectronics, N-Channel 1500V 7A (Tc) 250W (Tc) Through Hole TO-247, MDmesh™ K5	View
	PHB45NQ10T,118	Nexperia USA Inc., N-Channel 100V 47A (Tc) 150W (Tc) Surface Mount D2PAK, TrenchMOS™	View
	BUK9Y41-80E,115	Nexperia USA Inc., N-Channel 80V 24A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	CSD18503KCS	Texas Instruments, N-Channel 40V 100A (Tc) 188W (Tc) Through Hole TO-220-3, NexFET™	View

IPD80R360P7ATMA1 - Tags

IPD80R360P7ATMA1 IPD80R360P7ATMA1 PDF IPD80R360P7ATMA1 datasheet IPD80R360P7ATMA1 specification IPD80R360P7ATMA1 image IPD80R360P7ATMA1 India Renesas Electronics India IPD80R360P7ATMA1 buy IPD80R360P7ATMA1 IPD80R360P7ATMA1 price IPD80R360P7ATMA1 distributor IPD80R360P7ATMA1 supplier IPD80R360P7ATMA1 wholesales