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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Power MOSFET Selection Guide
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, STripFET™ II
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHA15N65E-GE3
Vishay Siliconix, N-Channel 650V 15A (Tc) 34W (Tc) Through Hole TO-220 Full Pack,
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IRFB3077PBF
Infineon Technologies, N-Channel 75V 120A (Tc) 370W (Tc) Through Hole TO-220AB, HEXFET®
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NTMS4807NR2G
ON Semiconductor, N-Channel 30V 9.1A (Ta) 860mW (Ta) Surface Mount 8-SOIC,
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TSM2N100CH C5G
Taiwan Semiconductor Corporation, N-Channel 1000V 1.85A (Tc) 77W (Tc) Through Hole TO-251 (IPAK),
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IRF740APBF
Vishay Siliconix, N-Channel 400V 10A (Tc) 125W (Tc) Through Hole TO-220AB,
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FDD4N60NZ
ON Semiconductor, N-Channel 600V 3.4A (Tc) 114W (Tc) Surface Mount DPAK, UniFET-II™
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SISA18ADN-T1-GE3
Vishay Siliconix, N-Channel 30V 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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BUK626R2-40C,118
Nexperia USA Inc., N-Channel 40V 90A (Tc) 128W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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STD1HN60K3
STMicroelectronics, N-Channel 600V 1.2A (Tc) 27W (Tc) Surface Mount DPAK, SuperMESH3™
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TSM900N06CP ROG
Taiwan Semiconductor Corporation, N-Channel 60V 11A (Tc) 25W (Tc) Surface Mount TO-252, (D-Pak),
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QS5U34TR
Rohm Semiconductor, N-Channel 20V 1.5A (Ta) 900mW (Ta) Surface Mount TSMT5,
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SQM47N10-24L_GE3
Vishay Siliconix, N-Channel 100V 47A (Tc) 136W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
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