Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4850BDY-T1-GE3

SI4850BDY-T1-GE3

SI4850BDY-T1-GE3

Part NumberSI4850BDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V SO-8

DatasheetSI4850BDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 8.4A (Ta), 11.3A (Tc) 2.5W (Ta), 4.5W (Tc) Surface Mount 8-SO

To learn about the specification of SI4850BDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4850BDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4850BDY-T1-GE3.
We are offering SI4850BDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4850BDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4850BDY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	8.4A (Ta), 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	19.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 30V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 4.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4850BDY-T1-GE3 - Related Products

	STFW69N65M5	STMicroelectronics, N-Channel 650V 58A (Tc) 79W (Tc) Through Hole ISOWATT-218FX, MDmesh™ V	View
	RTL035N03TR	Rohm Semiconductor, N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount TUMT6,	View
	SIHP22N60E-GE3	Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Through Hole,	View
	BUK7M15-60EX	Nexperia USA Inc., N-Channel 60V 42.9A (Tc) 62W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101	View
	STD3N40K3	STMicroelectronics, N-Channel 400V 2A (Tc) 30W (Tc) Surface Mount DPAK, SuperMESH3™	View
	STP20N90K5	STMicroelectronics, N-Channel 900V 20A (Tc) 250W (Tc) Through Hole TO-220, MDmesh™ K5	View
	FDC3512	ON Semiconductor, N-Channel 80V 3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	FDMS0312AS	ON Semiconductor, N-Channel 30V 18A (Ta), 22A (Tc) 2.5W (Ta), 36W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
	IPD60R3K3C6ATMA1	Infineon Technologies, N-Channel 600V 1.7A (Tc) 18.1W (Tc) Surface Mount PG-TO252-3, CoolMOS™ C6	View
	DMN2005UPS-13	Diodes Incorporated, N-Channel 20V 20A (Ta), 100A (Tc) 1.5W (Ta) Surface Mount PowerDI5060-8,	View
	NTMTS001N06CLTXG	ON Semiconductor, N-Channel 60V 398.2A 5W,	View
	SI7336ADP-T1-GE3	Vishay Siliconix, N-Channel 30V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View

SI4850BDY-T1-GE3 - Tags

SI4850BDY-T1-GE3 SI4850BDY-T1-GE3 PDF SI4850BDY-T1-GE3 datasheet SI4850BDY-T1-GE3 specification SI4850BDY-T1-GE3 image SI4850BDY-T1-GE3 India Renesas Electronics India SI4850BDY-T1-GE3 buy SI4850BDY-T1-GE3 SI4850BDY-T1-GE3 price SI4850BDY-T1-GE3 distributor SI4850BDY-T1-GE3 supplier SI4850BDY-T1-GE3 wholesales