IPD60R2K1CEAUMA1

Part NumberIPD60R2K1CEAUMA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD60R2K1CE, IPU60R2K1CE
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™ CE
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs	6.7nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 100V
FET Feature	-
Power Dissipation (Max)	38W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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