SQJA06EP-T1_GE3
SQJA06EP-T1_GE3
Part Number SQJA06EP-T1_GE3 Description MOSFET N-CH 60V 57A POWERPAKSO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 57A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SQJA06EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJA06EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJA06EP-T1_GE3.
We are offering SQJA06EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQJA06EP-T1_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQJA06EP Standard Package 1 Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 57A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V FET Feature - Power Dissipation (Max) 55W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SQJA06EP-T1_GE3 - Related ProductsMore >>
FQP10N20C ON Semiconductor, N-Channel 200V 9.5A (Tc) 72W (Tc) Through Hole TO-220-3, QFET®
View
CSD16301Q2 Texas Instruments, N-Channel 25V 5A (Tc) 2.3W (Ta) Surface Mount 6-SON, NexFET™
View
PSMN3R9-25MLC,115 Nexperia USA Inc., N-Channel 25V 70A (Tc) 69W (Tc) Surface Mount LFPAK33,
View
FCP190N60 ON Semiconductor, N-Channel 600V 20.2A (Tc) 208W (Tc) Through Hole TO-220-3, SuperFET® II
View
TSM85N10CZ C0G Taiwan Semiconductor Corporation, N-Channel 100V 81A (Tc) 210W (Tc) Through Hole TO-220,
View
IRFR214TRPBF Vishay Siliconix, N-Channel 250V 2.2A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,
View
IPB090N06N3GATMA1 Infineon Technologies, N-Channel 60V 50A (Tc) 71W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
IXFH6N100Q IXYS, N-Channel 1000V 6A (Tc) 180W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™
View
IRF7470TRPBF Infineon Technologies, N-Channel 40V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
SI4420DYTRPBF Infineon Technologies, N-Channel 30V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
SIA436DJ-T1-GE3 Vishay Siliconix, N-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
View
STL225N6F7AG STMicroelectronics, N-Channel 60V 120A (Tc) 188W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ F7
View
SQJA06EP-T1_GE3 - Tags
English
