Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXTN550N055T2

IXTN550N055T2

IXTN550N055T2

Part NumberIXTN550N055T2

ManufacturerIXYS

DescriptionMOSFET N-CH 55V 550A SOT-227

DatasheetIXTN550N055T2

Package / CaseSOT-227-4, miniBLOC

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 55V 550A (Tc) 940W (Tc) Chassis Mount SOT-227B

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IXTN550N055T2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXTN550N055T2
Standard Package	10
Manufacturer	IXYS
Series	GigaMOS™, TrenchT2™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	550A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	595nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	40000pF @ 25V
FET Feature	-
Power Dissipation (Max)	940W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC

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