Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHJ8N60E-T1-GE3

SIHJ8N60E-T1-GE3

SIHJ8N60E-T1-GE3

Part NumberSIHJ8N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V POWERPAK SO-8L

DatasheetSIHJ8N60E-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 8A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIHJ8N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHJ8N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHJ8N60E-T1-GE3.
We are offering SIHJ8N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHJ8N60E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHJ8N60E-T1-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	520mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	754pF @ 100V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIHJ8N60E-T1-GE3 - Related Products

	IPDD60R125G7XTMA1	Infineon Technologies, N-Channel 600V 20A (Tc) 120W (Tc) Surface Mount PG-HDSOP-10-1, CoolMOS™ G7	View
	TK31J60W,S1VQ	Toshiba Semiconductor and Storage, N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-3P(N), DTMOSIV	View
	SSM3K345R,LF	Toshiba Semiconductor and Storage, N-Channel 20V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	CSD16404Q5A	Texas Instruments, N-Channel 25V 21A (Ta), 81A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View
	AO3404A	Alpha & Omega Semiconductor Inc., N-Channel 30V 5.8A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,	View
	IXFN82N60Q3	IXYS, N-Channel 600V 66A (Tc) 960W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	STP45N40DM2AG	STMicroelectronics, N-Channel 400V 38A (Tc) 250W (Tc) Through Hole TO-220, Automotive, AEC-Q101, MDmesh™ DM2	View
	FDS8449	ON Semiconductor, N-Channel 40V 7.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	IRF6775MTRPBF	Infineon Technologies, N-Channel 150V 4.9A (Ta), 28A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ, HEXFET®	View
	BSP149H6327XTSA1	Infineon Technologies, N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	TSM340N06CP ROG	Taiwan Semiconductor Corporation, N-Channel 60V 30A (Tc) 66W (Tc) Surface Mount TO-252, (D-Pak),	View
	IRFI614GPBF	Vishay Siliconix, N-Channel 250V 2.1A (Tc) 23W (Tc) Through Hole TO-220-3,	View

SIHJ8N60E-T1-GE3 - Tags

SIHJ8N60E-T1-GE3 SIHJ8N60E-T1-GE3 PDF SIHJ8N60E-T1-GE3 datasheet SIHJ8N60E-T1-GE3 specification SIHJ8N60E-T1-GE3 image SIHJ8N60E-T1-GE3 India Renesas Electronics India SIHJ8N60E-T1-GE3 buy SIHJ8N60E-T1-GE3 SIHJ8N60E-T1-GE3 price SIHJ8N60E-T1-GE3 distributor SIHJ8N60E-T1-GE3 supplier SIHJ8N60E-T1-GE3 wholesales