Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHJ8N60E-T1-GE3

SIHJ8N60E-T1-GE3

SIHJ8N60E-T1-GE3

Part NumberSIHJ8N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V POWERPAK SO-8L

DatasheetSIHJ8N60E-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 8A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIHJ8N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHJ8N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHJ8N60E-T1-GE3.
We are offering SIHJ8N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHJ8N60E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHJ8N60E-T1-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	520mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	754pF @ 100V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIHJ8N60E-T1-GE3 - Related Products

	STWA65N60DM6	STMicroelectronics, N-Channel 600V 38A Through Hole TO-247 Long Leads, MDmesh™ DM6	View
	SI1302DL-T1-GE3	Vishay Siliconix, N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3, TrenchFET®	View
	SUM65N20-30-E3	Vishay Siliconix, N-Channel 200V 65A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	ZXMN2F30FHTA	Diodes Incorporated, N-Channel 20V 4.1A (Ta) 960mW (Ta) Surface Mount SOT-23-3,	View
	DMN60H080DS-7	Diodes Incorporated, N-Channel 600V 80mA (Ta) 1.1W (Ta) Surface Mount SOT-23-3,	View
	TN5325K1-G	Microchip Technology, N-Channel 250V 150mA (Ta) 360mW (Ta) Surface Mount TO-236AB (SOT23),	View
	FDMC0310AS	ON Semiconductor, N-Channel 30V 19A (Ta), 21A (Tc) 2.4W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®, SyncFET™	View
	SI4848DY-T1-E3	Vishay Siliconix, N-Channel 150V 2.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SIRA96DP-T1-GE3	Vishay Siliconix, N-Channel 30V 16A (Tc) 34.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	SIR846ADP-T1-GE3	Vishay Siliconix, N-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	NTMS4801NR2G	ON Semiconductor, N-Channel 30V 7.5A (Ta) 800mW (Ta) Surface Mount 8-SOIC,	View
	FDMS7570S	ON Semiconductor, N-Channel 25V 28A (Ta), 49A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View

SIHJ8N60E-T1-GE3 - Tags

SIHJ8N60E-T1-GE3 SIHJ8N60E-T1-GE3 PDF SIHJ8N60E-T1-GE3 datasheet SIHJ8N60E-T1-GE3 specification SIHJ8N60E-T1-GE3 image SIHJ8N60E-T1-GE3 India Renesas Electronics India SIHJ8N60E-T1-GE3 buy SIHJ8N60E-T1-GE3 SIHJ8N60E-T1-GE3 price SIHJ8N60E-T1-GE3 distributor SIHJ8N60E-T1-GE3 supplier SIHJ8N60E-T1-GE3 wholesales