Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIRA96DP-T1-GE3

SIRA96DP-T1-GE3

SIRA96DP-T1-GE3

Part NumberSIRA96DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 16A POWERPAKSO-8

DatasheetSIRA96DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 16A (Tc) 34.7W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIRA96DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIRA96DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIRA96DP-T1-GE3.
We are offering SIRA96DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIRA96DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIRA96DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	1385pF @ 15V
FET Feature	-
Power Dissipation (Max)	34.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIRA96DP-T1-GE3 - Related Products

	TSM15N50CZ C0G	Taiwan Semiconductor Corporation, N-Channel 500V 14A (Tc) Through Hole TO-220,	View
	SI5442DU-T1-GE3	Vishay Siliconix, N-Channel 20V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single, TrenchFET®	View
	IPB107N20N3GATMA1	Infineon Technologies, N-Channel 200V 88A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	FDMS8023S	ON Semiconductor, N-Channel 30V 26A (Ta), 49A (Tc) 2.5W (Ta), 59W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
	IXFY30N25X3	IXYS, N-Channel 250V 30A (Tc) 176W (Tc) Surface Mount TO-252AA, HiPerFET™	View
	STD3NK90ZT4	STMicroelectronics, N-Channel 900V 3A (Tc) 90W (Tc) Surface Mount DPAK, SuperMESH™	View
	PMZB600UNEYL	Nexperia USA Inc., N-Channel 20V 600mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View
	IRLD120PBF	Vishay Siliconix, N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	PSMN1R5-25YL,115	Nexperia USA Inc., N-Channel 25V 100A (Tc) 109W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	FQB33N10LTM	ON Semiconductor, N-Channel 100V 33A (Tc) 3.75W (Ta), 127W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	SI7370DP-T1-E3	Vishay Siliconix, N-Channel 60V 9.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	TSM60NB900CH C5G	Taiwan Semiconductor Corporation, N-Channel 600V 4A (Tc) 36.8W (Tc) Through Hole TO-251 (IPAK),	View

SIRA96DP-T1-GE3 - Tags

SIRA96DP-T1-GE3 SIRA96DP-T1-GE3 PDF SIRA96DP-T1-GE3 datasheet SIRA96DP-T1-GE3 specification SIRA96DP-T1-GE3 image SIRA96DP-T1-GE3 India Renesas Electronics India SIRA96DP-T1-GE3 buy SIRA96DP-T1-GE3 SIRA96DP-T1-GE3 price SIRA96DP-T1-GE3 distributor SIRA96DP-T1-GE3 supplier SIRA96DP-T1-GE3 wholesales