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CSD19531KCS

CSD19531KCS

Part NumberCSD19531KCS

ManufacturerTexas Instruments

DescriptionMOSFET N-CH 100V 100A TO220-3

DatasheetCSD19531KCS

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 100A (Ta) 214W (Tc) Through Hole TO-220-3

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CSD19531KCS - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	CSD19531KCS
Standard Package	50
Manufacturer	Texas Instruments
Series	NexFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	7.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3870pF @ 50V
FET Feature	-
Power Dissipation (Max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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