Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TK4R4P06PL,RQ

TK4R4P06PL,RQ

TK4R4P06PL,RQ

Part NumberTK4R4P06PL,RQ

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CHANNEL 60V 58A DPAK

DatasheetTK4R4P06PL

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 58A (Tc) 87W (Tc) Surface Mount DPAK

To learn about the specification of TK4R4P06PL,RQ, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TK4R4P06PL,RQ with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TK4R4P06PL,RQ.
We are offering TK4R4P06PL,RQ for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TK4R4P06PL,RQ - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK4R4P06PL
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.4mOhm @ 29A, 10V
Vgs(th) (Max) @ Id	2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	48.2nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3280pF @ 30V
FET Feature	-
Power Dissipation (Max)	87W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

TK4R4P06PL,RQ - Related Products

	HUF75345P3	ON Semiconductor, N-Channel 55V 75A (Tc) 325W (Tc) Through Hole TO-220-3, UltraFET™	View
	IRF5802TRPBF	Infineon Technologies, N-Channel 150V 900mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View
	SI7308DN-T1-GE3	Vishay Siliconix, N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IXTH130N15X4	IXYS, N-Channel 150V 130A (Tc) 400W (Tc) Through Hole TO-247,	View
	PSMN3R5-80PS,127	Nexperia USA Inc., N-Channel 80V 120A (Tc) 338W (Tc) Through Hole TO-220AB,	View
	IPSA70R750P7SAKMA1	Infineon Technologies, N-Channel 700V 6.5A (Tc) 34.7W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7	View
	SISS72DN-T1-GE3	Vishay Siliconix, N-Channel 150V 7A (Ta), 25.5A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET®	View
	IRLS3034TRLPBF	Infineon Technologies, N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®	View
	SUM65N20-30-E3	Vishay Siliconix, N-Channel 200V 65A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	HAT2173H-EL-E	Renesas Electronics America, N-Channel 100V 25A (Ta) 30W (Tc) Surface Mount LFPAK,	View
	STP6N60M2	STMicroelectronics, N-Channel 600V 4.5A (Tc) 60W (Tc) Through Hole TO-220, MDmesh™ II Plus	View
	SSM6K211FE,LF	Toshiba Semiconductor and Storage, N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSIII	View

TK4R4P06PL,RQ - Tags

TK4R4P06PL,RQ TK4R4P06PL,RQ PDF TK4R4P06PL,RQ datasheet TK4R4P06PL,RQ specification TK4R4P06PL,RQ image TK4R4P06PL,RQ India Renesas Electronics India TK4R4P06PL,RQ buy TK4R4P06PL,RQ TK4R4P06PL,RQ price TK4R4P06PL,RQ distributor TK4R4P06PL,RQ supplier TK4R4P06PL,RQ wholesales