Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSS87
Standard Package	1
Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 25V
FET Feature	-
Power Dissipation (Max)	580mW (Ta), 12.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-89
Package / Case	TO-243AA

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SIHP100N60E-GE3	Vishay Siliconix, N-Channel 600V 30A (Tc) 208W (Tc) Through Hole TO-220AB,	View
IRFZ44ESTRLPBF	Infineon Technologies, N-Channel 60V 48A (Tc) 110W (Tc) Surface Mount D2PAK, HEXFET®	View
IPL65R230C7AUMA1	Infineon Technologies, N-Channel 650V 10A (Tc) 67W (Tc) Surface Mount PG-VSON-4, CoolMOS™ C7	View
DMG3404L-7	Diodes Incorporated, N-Channel 30V 4.2A (Ta) 780mW (Ta) Surface Mount SOT-23,	View
IPW65R080CFDFKSA1	Infineon Technologies, N-Channel 700V 43.3A (Tc) 391W (Tc) Through Hole PG-TO247-3, CoolMOS™	View
DMG4466SSS-13	Diodes Incorporated, N-Channel 30V 10A (Ta) 1.42W (Ta) Surface Mount 8-SOP,	View
IRFI510GPBF	Vishay Siliconix, N-Channel 100V 4.5A (Tc) 27W (Tc) Through Hole TO-220-3,	View
SIHG80N60E-GE3	Vishay Siliconix, N-Channel 600V 80A (Tc) 520W (Tc) Through Hole TO-247AC,	View
IPL65R130C7AUMA1	Infineon Technologies, N-Channel 650V 15A (Tc) 102W (Tc) Surface Mount PG-VSON-4, CoolMOS™ C7	View
TK62N60W,S1VF	Toshiba Semiconductor and Storage, N-Channel 600V 61.8A (Ta) 400W (Tc) Through Hole TO-247, DTMOSIV	View

BSS87,115

Part NumberBSS87,115