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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK626R2-40C
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 25V
FET Feature -
Power Dissipation (Max) 128W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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NDS355AN
ON Semiconductor, N-Channel 30V 1.7A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,
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IRFH7446TRPBF
Infineon Technologies, N-Channel 40V 85A (Tc) 78W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®, StrongIRFET™
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IXYS, N-Channel 500V 26A (Tc) 500W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, Polar3™
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SI2328DS-T1-E3
Vishay Siliconix, N-Channel 100V 1.15A (Ta) 730mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
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STF6N65K3
STMicroelectronics, N-Channel 650V 5.4A (Tc) 30W (Tc) Through Hole TO-220FP, SuperMESH3™
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STW65N65DM2AG
STMicroelectronics, N-Channel 650V 60A (Tc) 446W (Tc) Through Hole TO-247, Automotive, AEC-Q101, MDmesh™ DM2
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SIHD2N80E-GE3
Vishay Siliconix, N-Channel 800V 2.8A (Tc) 62.5W (Tc) Surface Mount D-PAK (TO-252AA),
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BUK7613-100E,118
Nexperia USA Inc., N-Channel 100V 72A (Tc) 182W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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STP80NF03L-04
STMicroelectronics, N-Channel 30V 80A (Tc) 300W (Tc) Through Hole TO-220AB, STripFET™ II
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IXFH30N50Q3
IXYS, N-Channel 500V 30A (Tc) 690W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™
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