Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8812DB-T2-E1

SI8812DB-T2-E1

SI8812DB-T2-E1

Part NumberSI8812DB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V MICROFOOT

DatasheetSi8812DB

Package / Case4-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot

To learn about the specification of SI8812DB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8812DB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8812DB-T2-E1.
We are offering SI8812DB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8812DB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si8812DB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	59mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 8V
Vgs (Max)	±5V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-UFBGA

SI8812DB-T2-E1 - Related Products

	BSC0901NSIATMA1	Infineon Technologies, N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	DMJ7N70SK3-13	Diodes Incorporated, N-Channel 700V 3.9A (Tc) 28W (Tc) Surface Mount TO-252,	View
	IRFR110TRLPBF	Vishay Siliconix, N-Channel 100V 4.3A (Tc) 25W (Tc) Surface Mount,	View
	IRLR2908TRLPBF	Infineon Technologies, N-Channel 80V 30A (Tc) 120W (Tc) Surface Mount D-Pak, HEXFET®	View
	STFU15N80K5	STMicroelectronics, N-Channel 800V 14A (Tc) 35W (Tc) Through Hole TO-220FP, MDmesh™ K5	View
	HAT2166H-EL-E	Renesas Electronics America, N-Channel 30V 45A (Ta) 25W (Tc) Surface Mount LFPAK,	View
	SQJ872EP-T1_GE3	Vishay Siliconix, N-Channel 150V 24.5A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	STB140NF75T4	STMicroelectronics, N-Channel 75V 120A (Tc) 310W (Tc) Surface Mount D2PAK, STripFET™ III	View
	FDD10AN06A0	ON Semiconductor, N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA, PowerTrench®	View
	IRFB7440PBF	Infineon Technologies, N-Channel 40V 120A (Tc) 143W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™	View
	SQM40N15-38_GE3	Vishay Siliconix, N-Channel 150V 40A (Tc) 166W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	SIDR392DP-T1-GE3	Vishay Siliconix, N-Channel 30V 82A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC, TrenchFET® Gen IV	View

SI8812DB-T2-E1 - Tags

SI8812DB-T2-E1 SI8812DB-T2-E1 PDF SI8812DB-T2-E1 datasheet SI8812DB-T2-E1 specification SI8812DB-T2-E1 image SI8812DB-T2-E1 India Renesas Electronics India SI8812DB-T2-E1 buy SI8812DB-T2-E1 SI8812DB-T2-E1 price SI8812DB-T2-E1 distributor SI8812DB-T2-E1 supplier SI8812DB-T2-E1 wholesales