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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet AOD240
Standard Package 1
Manufacturer Alpha & Omega Semiconductor Inc.
Series -
Packaging Cut Tape (CT)
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 20V
FET Feature -
Power Dissipation (Max) 2.7W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STP43N60DM2
STMicroelectronics, N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-220, MDmesh™ DM2
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STD9HN65M2
STMicroelectronics, N-Channel 650V 5.5A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™ M2
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IRLS4030TRLPBF
Infineon Technologies, N-Channel 100V 180A (Tc) 370W (Tc) Surface Mount D2PAK, HEXFET®
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FDP15N40
ON Semiconductor, N-Channel 400V 15A (Tc) 170W (Tc) Through Hole TO-220-3, UniFET™
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DMTH6005LPS-13
Diodes Incorporated, N-Channel 60V 20.6A (Ta), 100A (Tc) 3.2W (Ta), 150W (Tc) Surface Mount PowerDI5060-8,
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IRLSL4030PBF
Infineon Technologies, N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-262, HEXFET®
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FQA27N25
ON Semiconductor, N-Channel 250V 27A (Tc) 210W (Tc) Through Hole TO-3PN, QFET®
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BUK9207-30B,118
Nexperia USA Inc., N-Channel 30V 75A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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PSMN1R3-30YL,115
Nexperia USA Inc., N-Channel 30V 100A (Tc) 121W (Tc) Surface Mount LFPAK56, Power-SO8,
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SQM40022E_GE3
Vishay Siliconix, N-Channel 40V 150A (Tc) 150W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®
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NTMS4816NR2G
ON Semiconductor, N-Channel 30V 6.8A (Ta) 780mW (Ta) Surface Mount 8-SOIC,
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ZXMN2A01E6TA
Diodes Incorporated, N-Channel 20V 2.5A (Ta) 1.1W (Ta) Surface Mount SOT-23-6,
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