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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ4182EY
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 15V
FET Feature -
Power Dissipation (Max) 7.1W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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SUM65N20-30-E3
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SI4686DY-T1-E3
Vishay Siliconix, N-Channel 30V 18.2A (Tc) 3W (Ta), 5.2W (Tc) Surface Mount 8-SO, TrenchFET®
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STD30N6LF6AG
STMicroelectronics, N-Channel 60V 24A (Tc) 40W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, STripFET™ F6
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RCX700N20
Rohm Semiconductor, N-Channel 200V 70A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,
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