SIJA52DP-T1-GE3
SIJA52DP-T1-GE3
Part Number SIJA52DP-T1-GE3 Description MOSFET N-CH 40V 60A PPAK SO-8L Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 60A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIJA52DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIJA52DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIJA52DP-T1-GE3.
We are offering SIJA52DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIJA52DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SiJA52DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.7mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 150nC @ 20V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 7150pF @ 20V FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIJA52DP-T1-GE3 - Related ProductsMore >>
CSD16556Q5B Texas Instruments, N-Channel 25V 100A (Tc) 3.2W (Ta), 191W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
View
IXTX90N25L2 IXYS, N-Channel 250V 90A (Tc) 960W (Tc) Through Hole PLUS247™-3, Linear L2™
View
IXFX21N100F IXYS-RF, N-Channel 1000V 21A (Tc) 500W (Tc) Through Hole PLUS247™-3, HiPerRF™
View
NVTFS4C05NTAG ON Semiconductor, N-Channel 30V 22A (Ta), 102A (Tc) 3.2W (Ta), 68W (Tc) Surface Mount 8-WDFN (3.3x3.3),
View
APT34N80B2C3G Microsemi Corporation, N-Channel 800V 34A (Tc) 417W (Tc) Through Hole T-MAX™ [B2],
View
STB8N65M5 STMicroelectronics, N-Channel 650V 7A (Tc) 70W (Tc) Surface Mount D2PAK, MDmesh™ V
View
STP80NF12 STMicroelectronics, N-Channel 120V 80A (Tc) 300W (Tc) Through Hole TO-220AB, STripFET™ II
View
SIHB22N65E-GE3 Vishay Siliconix, N-Channel 650V 22A (Tc) 227W (Tc) Surface Mount D2PAK,
View
IPL60R650P6SATMA1 Infineon Technologies, N-Channel 600V 6.7A (Tc) 56.8W (Tc) Surface Mount 8-ThinPak (5x6), CoolMOS™ P6
View
DMN3023L-7 Diodes Incorporated, N-Channel 30V 6.2A (Ta) 900mW (Ta) Surface Mount SOT-23,
View
STU4N52K3 STMicroelectronics, N-Channel 525V 2.5A (Tc) 45W (Tc) Through Hole I-PAK, SuperMESH3™
View
STF6N65M2 STMicroelectronics, N-Channel 650V 4A (Tc) 20W (Tc) Through Hole TO-220FP, MDmesh™
View
SIJA52DP-T1-GE3 - Tags
English
