Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS22DN-T1-GE3

SISS22DN-T1-GE3

SISS22DN-T1-GE3

Part NumberSISS22DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V PPAK 1212-8S

DatasheetSISS22DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 25A (Ta), 90.6A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS22DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS22DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS22DN-T1-GE3.
We are offering SISS22DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS22DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISS22DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	25A (Ta), 90.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1870pF @ 30V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS22DN-T1-GE3 - Related Products

	AO3400A	Alpha & Omega Semiconductor Inc., N-Channel 30V 5.7A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,	View
	SI2304BDS-T1-E3	Vishay Siliconix, N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	FDB86135	ON Semiconductor, N-Channel 100V 75A (Tc) 2.4W (Ta), 227W (Tc) Surface Mount D²PAK (TO-263AB), PowerTrench®	View
	IXFH50N85X	IXYS, N-Channel 850V 50A (Tc) 890W (Tc) Through Hole TO-247, HiPerFET™	View
	TPWR8503NL,L1Q	Toshiba Semiconductor and Storage, N-Channel 30V 150A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance, U-MOSVIII-H	View
	2SK3747-1E	ON Semiconductor, N-Channel 1500V 2A (Ta) 3W (Ta), 50W (Tc) Through Hole TO-3PF-3,	View
	IXFK32N100Q3	IXYS, N-Channel 1000V 32A (Tc) 1250W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™	View
	FQD13N06TM	ON Semiconductor, N-Channel 60V 10A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak, QFET®	View
	DMNH4011SPSQ-13	Diodes Incorporated, N-Channel 40V 12.9A (Ta), 100A (Tc) 2.5W (Ta), 150W (Tc) Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	IRFI720GPBF	Vishay Siliconix, N-Channel 400V 2.6A (Tc) 30W (Tc) Through Hole TO-220-3,	View
	PSMN016-100YS,115	Nexperia USA Inc., N-Channel 100V 51A (Tc) 117W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	RUM002N02T2L	Rohm Semiconductor, N-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount VMT3,	View

SISS22DN-T1-GE3 - Tags

SISS22DN-T1-GE3 SISS22DN-T1-GE3 PDF SISS22DN-T1-GE3 datasheet SISS22DN-T1-GE3 specification SISS22DN-T1-GE3 image SISS22DN-T1-GE3 India Renesas Electronics India SISS22DN-T1-GE3 buy SISS22DN-T1-GE3 SISS22DN-T1-GE3 price SISS22DN-T1-GE3 distributor SISS22DN-T1-GE3 supplier SISS22DN-T1-GE3 wholesales