AOT10N60
AOT10N60
Part Number AOT10N60 Description MOSFET N-CH 600V 10A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 10A (Tc) 250W (Tc) Through Hole TO-220
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AOT10N60 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet AOT(F)10N60 Standard Package 1000 Manufacturer Alpha & Omega Semiconductor Inc. Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 750mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3
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DMN2400UFB-7 Diodes Incorporated, N-Channel 20V 750mA (Ta) 470mW (Ta) Surface Mount 3-X1DFN1006,
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SSM3K16FU,LF Toshiba Semiconductor and Storage, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount USM, π-MOSVI
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IRFR024TRLPBF Vishay Siliconix, N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,
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BUK9M9R1-40EX Nexperia USA Inc., N-Channel 40V 64A (Tc) 75W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™
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SI4800BDY-T1-E3 Vishay Siliconix, N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SO, TrenchFET®
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